气体注入系统

TESCAN FERA3 is a Focused Ion Beam –Scanning Electron Microscope (FIB-SEM) with a fully integrated xenon plasma ion source. The Xe plasma ion source enables high current ion beams which on one hand, allows for extremely high milling rates - ideal for removing large volumes of material. This is a valuable quality for many technological applications in different areas such as the semiconductor industry. On the other hand, milling at high current ion beams can cause in some cases surface artifacts. One method for dealing with this situation is to use an optimised FIB scanning strategy in combination with the novel TESCAN Rocking Stage. The Rocking stage allows for tilting the sample during the milling process so that the direction of the ion beam can be changed, a strategy which has been proven to be effective for reducing curtaining effects on the milled surfaces. Alternatively, another promising way for removing surface artifacs has been found. It consists of injecting xenon difluoride (XeF₂) precursor –by using a Gas Injection System (GIS) - during the FIB polishing process. The goal of this application note is to present and discuss the results of the application of this technique on different materials.